Hall measurements on nitrogen-doped Ib-type synthetic single crystal diamonds at temperatures 550–1143 K.

This article focuses on the investigation of the electronic properties of synthetic nitrogen-doped Ib-type single-crystal diamonds grown by temperature gradient high-pressure high-temperature (TG-HPHT) and chemical vapor deposition (CVD) methods. The study measured electrical resistivity, Hall mobility, and free electron concentration in diamonds containing isolated substitutional nitrogen atoms (C-centers) with concentrations ranging from 8.5 × 10^17 to 6.5 × 10^19 cm^−3 over temperatures from 550 to 1143 K. Results show that nitrogen doping during growth produces low compensation ratios (as low as ~1% in CVD samples), high electron mobilities (up to 600 cm² V^−1 s^−1 at lower temperatures), and activation energies decreasing from about 1.63 to 1.33 eV with increasing nitrogen concentration, indicating good n-type semiconductor behavior suitable for high-temperature electronic applications. The findings suggest that Ib-type nitrogen-doped diamonds, which are less costly and simpler to produce than phosphorus-doped diamonds, hold promise for use in durable, high-temperature electronic and optoelectronic devices.