The effect of p-doping in mid- and long-wavelength InAs/InAsSb superlattice complementary barrier infrared detectors.

This article focuses on the comparative performance of mid-wavelength and long-wavelength InAs/InAsSb superlattice complementary barrier infrared detectors (CBIRDs) with n-type and p-type absorbers, emphasizing the impact of absorber doping profiles. The study finds that p-type absorbers offer enhanced quantum efficiency (QE) due to longer electron diffusion lengths but exhibit higher dark current from generation-recombination and trap-assisted tunneling mechanisms, whereas n-type absorbers provide lower dark current but reduced QE. In long-wavelength devices, increasing p-type doping improves QE but also raises tunneling dark current, attributed to higher electric fields in narrower depletion regions, highlighting a trade-off between QE and dark current. The article also notes challenges related to surface effects in p-type InAs/InAsSb absorbers, suggesting that surface passivation is necessary to mitigate dark current. These findings provide insights into optimizing CBIRD designs for infrared detection applications.