Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission.

This article focuses on the development and characterization of lateral light-emitting transistors (LETs) based on silicon-on-insulator (SOI) structures with self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals (PhCs). It demonstrates that the application of a gate voltage significantly influences the spatial distribution and intensity of electroluminescence (EL) in the near-infrared range (1.2–1.7 μm), shifting the emission maximum between the i/p⁺ and i/n⁺ junctions of the LET due to changes in charge carrier transport. By designing a "double" PhC with different lattice parameters at these junctions, the study shows that switching the gate voltage polarity can effectively tune the EL spectral properties, suggesting potential applications in tunable light sources and optoelectronic devices compatible with silicon photonics.