JOURNAL ARTICLE

Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy.

  • Published In: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, 2023, v. 41, n. 3. P. 1 1 of 3

  • Database: Applied Science & Technology Source Ultimate 2 of 3

  • Authored By: Hao, Qinzhen; Kim, Pilbum; Nam, Sang Ki; Kang, Song-Yun; Donnelly, Vincent M. 3 of 3

Abstract

This article focuses on the use of optical emission spectroscopy (OES) as a real-time diagnostic tool for atomic layer etching (ALE) of silicon (Si) in an argon (Ar) inductively coupled plasma (ICP) with pulsed chlorine (Cl₂) gas. The study demonstrates that emissions from SiCl and SiCl₂ species primarily originate from primary etching products near the substrate surface, with their time-integrated intensities correlating linearly with etching rates measured by laser interferometry. The research highlights that the amount of Si etched per ALE cycle and the self-limiting nature of the process depend sensitively on the timing between Cl₂ gas flow and ICP power application. Consequently, OES provides mechanistic insights and enables optimization of plasma-assisted ALE processes by monitoring etching products in situ.

Additional Information

  • Source:Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. 2023/05, Vol. 41, Issue 3, p1
  • Document Type:Article
  • Subject Area:Chemistry
  • Publication Date:2023
  • ISSN:07342101
  • DOI:10.1116/6.0002482
  • Accession Number:163561734
  • Copyright Statement:Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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