Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions.

This article focuses on the reliability degradation of static random-access memory (SRAM) physical unclonable functions (PUFs) caused by high-energy heavy ion radiation, particularly relevant for power-sensitive satellites. Experimental results from planar and FinFET-based SRAM PUF test chips show that 3%–10% of SRAM bits change their original power-up states after exposure to heavy ions, due to ion-induced microdose effects that generate trapped charges at the silicon/insulation interface. Three-dimensional technology computer-aided design (3D-TCAD) simulations reveal that these trapped charges cause mismatches in off-state transistor currents, altering stored values and thus compromising the reliability of SRAM PUFs used for device authentication. The study highlights the need for multiple readings and error correction logic in aerospace-grade SRAM PUF circuits to mitigate radiation-induced errors.