Coexistence of analog and digital resistive switching behaviors in TiN/SiN_x resistive random access memory device.

This article focuses on the development and characterization of digital–analog hybrid resistive random access memory (RRAM) devices with Ta/SiNx/TiN/Pt structures, which exhibit both analog resistive state (ARS) and digital resistive state (DRS) behaviors depending on the applied voltage range. The study demonstrates that the ARS behavior before the forming process is governed by a Schottky barrier at the SiNx/TiN interface, while the DRS behavior after forming results from the formation and rupture of conductive filaments within the SiNx and TiN layers. Devices with thicker SiNx layers (30–40 nm) show improved performance, including higher on/off resistance ratios, stable cycling endurance, and enhanced suitability for computing-in-memory (CIM) applications, particularly in neural network models. The findings provide insights into the physical mechanisms underlying hybrid resistive switching and suggest a feasible approach for integrating digital and analog functionalities in a single RRAM device.