JOURNAL ARTICLE

The filaments control for tunning digital resistive switching in data storage application and analog behavior as an artificial synapse with CsPbBr3-based memristor.

  • Published In: Applied Physics Letters, 2024, v. 124, n. 6. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Zhu, Yuanyuan; Chen, Mengyao; Lu, Hongbing; Mi, Pengtao; Luo, Daobin; Wang, Youqing; Liu, Yong; Xiong, Rui; Wang, Hongjun 3 of 3

Abstract

This article focuses on the development and tunability of resistive switching (RS) behaviors in memristors based on cesium lead bromide (CsPbBr₃) films fabricated via a solution-processed method. By varying the thickness of the CsPbBr₃ switching layer in Al/CsPbBr₃/ITO structured memristors, the devices exhibit either gradual analog RS with multi-level conductance suitable for artificial synapse applications or abrupt digital RS with a high memory window (>10³) appropriate for data storage. The distinct RS behaviors are attributed to the formation and rupture dynamics of conductive filaments composed of synergistic bromine vacancies and aluminum atoms. This work provides an optimization strategy for tuning RS characteristics in CsPbBr₃ memristors, advancing their potential use in neuromorphic computing and nonvolatile memory technologies.

Additional Information

  • Source:Applied Physics Letters. 2024/02, Vol. 124, Issue 6, p1
  • Document Type:Article
  • Subject Area:Computer Science
  • Publication Date:2024
  • ISSN:0003-6951
  • DOI:10.1063/5.0188561
  • Accession Number:175356797
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