JOURNAL ARTICLE
Design and Investigation of Junction-less TFET (JL-TFET) for the Realization of Logic Gates.
Published In: NANO (1793-2920), 2025, v. 20, n. 7. P. 1 1 of 3
Database: Academic Search Ultimate 2 of 3
Authored By: Shah, Bhushit; Singh, Prabhat; Raman, Ashish; Singh, Nagendra Pratap 3 of 3
Abstract
The demand for energy-efficient electronics has propelled the exploration of alternative transistor technologies, among which Tunnel Field-Effect Transistors (TFETs) have garnered significant interest as compared to MOSFETs, and our main focus is on getting a power-efficient device. This paper presents a comprehensive study on the utilization of TFETs for logic gate implementation, emphasizing their potential to revolutionize low-power digital circuits. TFETs offer a steep Sub-threshold Swing (SS) and can operate at lower supply voltages compared to conventional MOSFETs, making them ideal candidates for power-sensitive applications. We have designed and implemented the logic gates, including OR, NAND, AND and NOR gates, using a JL-TFET device. JL-TFET is implemented for OR and NAND functions by biasing two gates separately, and using the Gate-Source (Lov) overlapping method, JL-TFET is implemented for AND and NOR functions. These implementations illustrate that the distinct properties of TFETs, including ambipolar conduction and the tunneling dependency on Gate-Source/Drain overlaps, can be effectively leveraged to achieve compact logic functions. This research presents a comprehensive study on the utilization of TFETs for logic gate implementation, emphasizing their potential to revolutionize low-power digital circuits. TFETs offer a steep sub-threshold swing (SS) and can operate at lower supply voltages compared to conventional MOSFETs, making them ideal candidates for power-sensitive applications. We have designed and implemented the logic gates, including OR, NAND, AND, and NOR gates, using a Junction-less TFET device. JL-TFET is implemented for OR and NAND functions by biasing two gates separately and using the Gate-Source (Lov) overlapping method, JL-TFET is implemented for AND and NOR functions. These implementations illustrate that the distinct properties of TFETs, including ambipolar conduction and the tunneling dependency on Gate-Source/Drain overlaps, can be effectively leveraged to achieve compact logic functions. [ABSTRACT FROM AUTHOR]
Additional Information
- Source:NANO (1793-2920). 2025/06, Vol. 20, Issue 7, p1
- Document Type:Article
- Subject Area:Engineering
- Publication Date:2025
- ISSN:1793-2920
- DOI:10.1142/S1793292024501601
- Accession Number:186392790
- Copyright Statement:Copyright of NANO (1793-2920) is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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