JOURNAL ARTICLE

A Class of RF-MEMS Switches with Low Pull-In Voltage.

  • Published In: Journal of Circuits, Systems & Computers, 2025, v. 34, n. 16. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Tagliapietra, Girolamo; Iannacci, Jacopo 3 of 3

Abstract

This paper presents a class comprising three series of Ohmic switches, elucidating their design principles, simulation outcomes and the findings derived from measuring the initial batch of manufactured samples. The design of the membranes employs meandered beams to achieve a small actuation voltage. Initial electro-mechanical simulations, conducted within the Ansys Workbench environment, projected actuation voltages ranging from 5 to 8 Volts, whereas the measured values were marginally higher. The electromagnetic behavior of these devices demonstrated a generally qualitative concordance with simulations performed in the Ansys HFSS environment, exhibiting satisfactory performance in terms of return loss (< − 2 0. 2 2   dB) and isolation (< − 1 4. 8 6   dB) across the 5–30 GHz frequency spectrum. [ABSTRACT FROM AUTHOR]

Additional Information

  • Source:Journal of Circuits, Systems & Computers. 2025/11, Vol. 34, Issue 16, p1
  • Document Type:Article
  • Subject Area:Engineering
  • Publication Date:2025
  • ISSN:0218-1266
  • DOI:10.1142/S0218126624410044
  • Accession Number:187194336
  • Copyright Statement:Copyright of Journal of Circuits, Systems & Computers is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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