JOURNAL ARTICLE

On-Chip GaN Planar Transformer Design for Highly Integrated RF Systems.

  • Published In: Journal of Circuits, Systems & Computers, 2023, v. 32, n. 9. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Derkaoui, Mokhtaria; Benhadda, Yamina; Chaabene, Ghacen; Spiteri, Pierre 3 of 3

Abstract

The work presented in this paper concerns the design of an on-chip GaN transformer. The integrated transformer is composed of two planar stacked coils with spiral octagonal geometry. A comparison is done on different analytical methods to calculate the inductance of the transformer spiral planar coils. Three transformers with different outer diameters are compared to illustrate the influence of the coil geometry. The estimated inductance and dc series resistance are evaluated. Using COMSOL Multiphysics 5.3 software, the thermal effect is illustrated in the integrated transformer operating at high frequencies. The different parasitic effects created by the planar stacked layers are validated by the equivalent electrical circuit, and the different electrical parameters are calculated. [ABSTRACT FROM AUTHOR]

Additional Information

  • Source:Journal of Circuits, Systems & Computers. 2023/06, Vol. 32, Issue 9, p1
  • Document Type:Article
  • Subject Area:Engineering
  • Publication Date:2023
  • ISSN:0218-1266
  • DOI:10.1142/S0218126623501499
  • Accession Number:164202703
  • Copyright Statement:Copyright of Journal of Circuits, Systems & Computers is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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