JOURNAL ARTICLE

Design of CNTFET-Based Electronic Circuits: A Review.

  • Published In: International Journal of Nanoscience, 2024, v. 23, n. 1. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Marani, R.; Perri, A. G. 3 of 3

Abstract

In this review, we present some designs of CNTFET-based circuits, already proposed by us, and critically examine them here. For some of these, we compare the performance of proposed circuits both in CNTFET and CMOS technology. For the CNTFET model, we use a compact, semi-empirical model, already proposed by us and briefly recalled, while, for the MOSFET model, we use the BSIM4 one of the ADS library. Moreover in some design examples, we compare our results with those obtained using the Stanford model. All simulations are carried out using the software advanced design system (ADS), which is compatible with the Verilog-A programming language. [ABSTRACT FROM AUTHOR]

Additional Information

  • Source:International Journal of Nanoscience. 2024/02, Vol. 23, Issue 1, p1
  • Document Type:Article
  • Subject Area:Engineering
  • Publication Date:2024
  • ISSN:0219-581X
  • DOI:10.1142/S0219581X23300079
  • Accession Number:175284016
  • Copyright Statement:Copyright of International Journal of Nanoscience is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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