JOURNAL ARTICLE

Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride.

  • Published In: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, 2023, v. 41, n. 6. P. 1 1 of 3

  • Database: Applied Science & Technology Source Ultimate 2 of 3

  • Authored By: Kim, Hankyu; Kim, Miso; Kim, Bumsang; Shong, Bonggeun 3 of 3

Abstract

This article focuses on the investigation of gas-phase and surface adsorption reactions of monomeric and dimeric gallium precursors during the metalorganic chemical vapor deposition (MOCVD) of gallium nitride (GaN) using trimethyl gallium (TMG) and ammonia (NH3). Using density functional theory (DFT) calculations, the study identifies [(CH3)2Ga(NH2)]2 as the predominant dimeric precursor under typical MOCVD conditions and finds that the dimeric [(CH3)GaNH]2 species, formed via thermal decomposition, exhibits higher surface reactivity due to lower activation energy for Ga–N bond cleavage. The results highlight distinct reaction pathways for monomeric and dimeric precursors, with implications for optimizing GaN MOCVD processes to enhance the growth of high-performance GaN semiconductors.

Additional Information

  • Source:Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. 2023/12, Vol. 41, Issue 6, p1
  • Document Type:Article
  • Subject Area:Geology
  • Publication Date:2023
  • ISSN:07342101
  • DOI:10.1116/6.0002966
  • Accession Number:173977176
  • Copyright Statement:Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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