Evaluation of high intensity synchrotron radiation x-ray imaging using Si crystals with lapped surface at 33.3 keV.

This article focuses on the quantitative evaluation of a novel x-ray optical system that uses silicon (Si) crystals lapped with silicon carbide (SiC) abrasives to enhance monochromatic synchrotron radiation x-ray intensity for high-resolution imaging applications such as microangiography. The study demonstrates that lapped Si crystals increase x-ray intensity by approximately eightfold compared to conventional etched Si crystals, due to a widened x-ray diffraction energy bandwidth, but this enhancement comes with a reduction in spatial resolution—about 70% lower in the diffraction-plane direction. Additionally, the contrast noise ratio (CNR) of images, particularly when using iodine-based contrast agents, improved threefold with lapped crystals, enabling shorter exposure times for dynamic imaging. These findings suggest that the choice between lapped and etched Si crystals should be guided by specific research needs, balancing the trade-off between higher x-ray intensity and spatial resolution for applications such as cardiovascular and vascular system imaging.