JOURNAL ARTICLE

The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity.

  • Published In: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, 2023, v. 41, n. 4. P. 1 1 of 3

  • Database: Applied Science & Technology Source Ultimate 2 of 3

  • Authored By: Litwin, Peter M.; Jaszewski, Samantha T.; Sarney, Wendy L.; Leff, Asher C.; Krylyuk, Sergiy; Davydov, Albert V.; Ihlefeld, Jon F.; McDonnell, Stephen J. 3 of 3

Abstract

This article focuses on the synthesis and characterization of self-intercalated Nb₁₊ₓSe₂ thin films grown by molecular beam epitaxy (MBE) on SiO₂ substrates, examining the influence of the selenium (Se) to niobium (Nb) beam equivalence pressure ratio (BEPR) during growth. The study finds that at Se to Nb BEPRs of 5:1 and higher, Nb-rich Nb₁₊ₓSe₂ phases form, with excess Nb atoms occupying van der Waals gaps between layers, leading to an expanded out-of-plane lattice parameter and increased electrical resistivity inversely related to BEPR. At a lower BEPR of 2:1, a distinct Nb-Se compound with approximately 1:1 stoichiometry and no layered structure was synthesized. These results demonstrate that self-intercalation is a stable and tunable feature in multilayer NbSe₂ thin films grown by MBE, affecting their structural and electrical properties.

Additional Information

  • Source:Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. 2023/07, Vol. 41, Issue 4, p1
  • Document Type:Article
  • Subject Area:Physics
  • Publication Date:2023
  • ISSN:07342101
  • DOI:10.1116/6.0002593
  • Accession Number:164785030
  • Copyright Statement:Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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