JOURNAL ARTICLE

Numerical investigation of flow and particles contamination in reticle mini environment for extreme ultraviolet lithography.

  • Published In: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics, 2024, v. 42, n. 5. P. 1 1 of 3

  • Database: Applied Science & Technology Source Ultimate 2 of 3

  • Authored By: Wang, Qi; Wang, Kuibo; Wu, Xiaobin; Gao, Zixiang 3 of 3

Abstract

This article focuses on the simulation and analysis of particle behavior within the extreme ultraviolet (EUV) scanner reticle mini environment (RME), a critical factor affecting integrated circuit yield in EUV lithography. Using the direct simulation Monte Carlo (DSMC) method and a bidirectional coupled gas-solid two-phase model, the study reveals that increasing hydrogen gas flow rates creates a "particle inhibition zone" near the reticle masking blade (RMB), effectively reducing particle deposition on the reticle surface. The "stopping distance" of contaminant particles stabilizes around 4 mm at high flow rates, with a residual particle rate as low as 1.4%, demonstrating that controlled airflow can mitigate contamination risks while maintaining vacuum conditions essential for EUV lithography. The findings emphasize the importance of optimizing gas flow parameters to balance particle suppression and vacuum integrity in the RME.

Additional Information

  • Source:Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics. 2024/09, Vol. 42, Issue 5, p1
  • Document Type:Article
  • Subject Area:Physics
  • Publication Date:2024
  • ISSN:21662746
  • DOI:10.1116/6.0003791
  • Accession Number:179975816
  • Copyright Statement:Copyright of Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Looking to go deeper into this topic? Look for more articles on EBSCOhost.