JOURNAL ARTICLE

Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4−x) family.

  • Published In: Applied Physics Letters, 2025, v. 126, n. 16. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Wei, Jinghui; Tian, Qikun; Xu, XinTing; Qin, Guangzhao; Zuo, Xu; Qin, Zhenzhen 3 of 3

Abstract

This article focuses on the theoretical design and analysis of Janus MAA'ZₓZ'₄₋ₓ monolayers derived from two-dimensional MA₂Z₄ materials (where M = Mg, Ca, Sr; A, A′ = Al, Ga, In; Z, Z′ = S, Se, Te) and their Rashba and topological properties. Using first-principles calculations, the study identifies 135 stable Janus configurations, including 26 Rashba semiconductors characterized by isolated spin-splitting bands mainly from Se/Te-p_z orbitals, and 54 inversion-asymmetric topological insulators (TIs) exhibiting band inversion and nontrivial topology influenced by spin–orbit coupling (SOC). The Rashba constant correlates with intrinsic electric fields and SOC strength, while small biaxial strains can tune the transition between topological and non-topological phases, accompanied by distinctive hybrid spin textures. These findings provide insights into the design principles of Rashba semiconductors and inversion-asymmetric TIs, highlighting their potential applications in spintronics and nonlinear optoelectronics.

Additional Information

  • Source:Applied Physics Letters. 2025/04, Vol. 126, Issue 16, p1
  • Document Type:Article
  • Subject Area:Physics
  • Publication Date:2025
  • ISSN:0003-6951
  • DOI:10.1063/5.0258804
  • Accession Number:184759353
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