JOURNAL ARTICLE

Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence.

  • Published In: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics, 2024, v. 42, n. 6. P. 1 1 of 3

  • Database: Applied Science & Technology Source Ultimate 2 of 3

  • Authored By: Ebadollahi, Nikki; Namboodiri, Pradeep N.; Pederson, Christian; Veetil, Vijin K.; Davanco, Marcelo I.; Srinivasan, Kartik A.; Katzenmeyer, Aaron M.; Pelton, Matthew; Pomeroy, Joshua M. 3 of 3

Abstract

This article focuses on the design, fabrication, and characterization of silicon color center (CC) light-emitting diode (LED) devices that emit in the telecommunication O-band. Two types of CCs—W-centers (composed of silicon interstitials and a vacancy) and G-centers (composed of carbon atoms and a silicon interstitial)—were synthesized in silicon-on-insulator wafers and integrated into p-i-n junction LEDs. Electrical and optical measurements at cryogenic temperatures demonstrated that W-center devices with a gap between ohmic contacts (p-i-n devices) produced the brightest electroluminescence, confirmed by a zero-phonon line (ZPL) at 1218 nm, while G-center devices showed differing electrical and optical trends with spectroscopy still in progress. These findings advance the development of silicon-based quantum light sources potentially compatible with on-chip quantum dot integration.

Additional Information

  • Source:Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics. 2024/12, Vol. 42, Issue 6, p1
  • Document Type:Article
  • Subject Area:Physics
  • Publication Date:2024
  • ISSN:21662746
  • DOI:10.1116/6.0004055
  • Accession Number:181982707
  • Copyright Statement:Copyright of Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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