JOURNAL ARTICLE

Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film.

  • Published In: Applied Physics Letters, 2025, v. 126, n. 2. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Pashartis, C.; van Setten, M. J.; Pourtois, G. 3 of 3

Abstract

This article focuses on the challenges of accurately measuring residual stress in ultra-thin silicon films (thickness <5 nm) using micro-Raman spectroscopy, a key technique in nanoelectronics device characterization. It demonstrates through ab initio density functional theory calculations that the elastic properties of silicon films deviate significantly from bulk values at these scales, leading to substantial overestimation—up to a factor of six—in stress measurements if bulk elastic tensors are assumed. The study highlights that phonon frequency shifts, which correlate with Raman peak shifts under strain, differ markedly in ultra-thin films due to surface and confinement effects, emphasizing the need to reevaluate elastic tensors for precise stress quantification in nanoscale semiconductor layers.

Additional Information

  • Source:Applied Physics Letters. 2025/01, Vol. 126, Issue 2, p1
  • Document Type:Article
  • Subject Area:Science
  • Publication Date:2025
  • ISSN:0003-6951
  • DOI:10.1063/5.0240392
  • Accession Number:182307746
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