Thermal Annealing-Induced Recovery of the VT of Irradiated Commercial MOS Transistors.

This paper describes and compares the recovery of the threshold voltage shift of lateral and vertical p-channel double diffused MOS field effect transistors caused by irradiation. The internal structure of both p-VDMOS and p-LDMOS devices is analyzed, alongside a thermal compensation technique that takes advantage of the analyzed structures. Thermal characterization and irradiation are performed on two different series of commercial devices: the CD4007, which contains p-channel lateral DMOSFET, and the commercial p-channel power vertical DMOSFETs IRF9520 and IRF9530. After irradiation, thermal annealing was carried out, in order to measure threshold voltage recovery and to compare and assess both groups of devices as dosimeters. The measuring setup and conditions for all experiment phases are described in detail. The results are discussed, and the usage of these devices as dosimeters in some commercial applications is considered. [ABSTRACT FROM AUTHOR]