Synthesis of high resistive two-dimensional nonlayered Cr₂S₃ nanoflakes with stable phosphorus dopants by chemical vapor deposition.

This article focuses on the synthesis and characterization of phosphorus (P)-doped nonlayered two-dimensional (2D) chromium sulfide (Cr₂S₃) nanoflakes via atmospheric chemical vapor deposition (APCVD). The study demonstrates that controlled P doping and surface passivation significantly increase the electrical resistivity of Cr₂S₃ nanoflakes by four orders of magnitude compared to intrinsic Cr₂S₃, attributed to reduced surface defects and n-type doping effects. Structural analyses confirm that P atoms are incorporated into the Cr₂S₃ lattice without altering its rhombohedral crystal structure, while electrical measurements reveal stable p-type conduction and enhanced resistivity suitable for electronic and optoelectronic applications. The work highlights the potential of heteroatom doping and surface passivation as strategies to tune the electronic properties of nonlayered 2D materials for device integration.