JOURNAL ARTICLE

Regulation of flux-closure domain structures via oxygen vacancies and charged scanning probe microscopy.

  • Published In: Applied Physics Letters, 2023, v. 123, n. 9. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Hu, S. W.; Xiong, X. F.; Luo, S. S.; Liu, Y. Y.; Lei, C. H.; Pan, K. 3 of 3

Abstract

The article focuses on the regulation of flux-closure ferroelectric topological domain structures in PbTiO₃ (PTO) thin films by considering the effects of oxygen vacancies and local electric fields applied via charged scanning probe microscopy (SPM). It demonstrates that oxygen vacancies migrate under built-in and external electric fields, influencing polarization rotation and domain wall migration within the flux-closure domains. The study finds that while charged SPM can induce the growth of new flux-closure domains to increase topological state density, a threshold concentration of oxygen vacancies can suppress or entirely inhibit this domain evolution, stabilizing the structure. These findings suggest potential strategies for enhancing and stabilizing ferroelectric memory units through combined electric field modulation and ion injection.

Additional Information

  • Source:Applied Physics Letters. 2023/08, Vol. 123, Issue 9, p1
  • Document Type:Article
  • Subject Area:Science
  • Publication Date:2023
  • ISSN:0003-6951
  • DOI:10.1063/5.0160730
  • Accession Number:171343656
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