JOURNAL ARTICLE

Study of low-temperature magnetic properties of the antiferromagnetic topological insulator Sm-doped MnBi2Te4.

  • Published In: Modern Physics Letters B, 2023, v. 37, n. 27. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Ou, X. L.; Wang, J; Zhao, K.; Yang, X. S.; Zhao, Y. 3 of 3

Abstract

MnBi2Te4 is the first discovered intrinsic magnetic topological insulator. It has great research significance and is related to new phenomena such as topological magneto-electric effect and quantum anomalous Hall effect (QAHE). We report first doping of rare-earth elements in MnBi2Te4 crystals. MnBi2Te4 crystalline samples with different Sm doping ratios were synthesized, and Sm atoms may enter the lattice and replace Mn atoms. Low-temperature magnetization measurements show that, in addition to the antiferromagnetic (AFM) transition of MnBi2Te4, some doped samples undergo small-scale ferromagnetic transitions at around 15 K. Doping furthermore reduces the magnetic field required for the transition to the canted AFM (CAFM) state and slightly increases the Néel temperature of the crystal. Our results suggest that doping rare-earth elements may be a feasible method for tuning the magnetism of MnBi2Te4 and for future applications of magnetic topological insulators. [ABSTRACT FROM AUTHOR]

Additional Information

  • Source:Modern Physics Letters B. 2023/09, Vol. 37, Issue 27, p1
  • Document Type:Article
  • Subject Area:Science
  • Publication Date:2023
  • ISSN:0217-9849
  • DOI:10.1142/S0217984923501142
  • Accession Number:170031037
  • Copyright Statement:Copyright of Modern Physics Letters B is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

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