Relationship Between Growth Surface Temperature and Crystal Structure of TiO₂ Coatings Prepared Using Direct Current Pulsed Magnetron Sputtering Technology.

In this study, TiO2 coatings are deposited on Si(100) wafers by direct current pulsed magnetron sputtering technology. The crystal structure of TiO2 coatings gradually transforms from the anatase phase to the amorphous phase when the sputtering power is decreased from 900 W to 150 W. Besides, the growth surface temperature of TiO2 coatings decreases from 630°C to 241°C. The relationship between the growth behavior and growth surface temperature of TiO2 coatings is investigated using the dynamic scaling theory. The results show that in the first stage, the growth behavior of TiO2 coatings gradually transforms from the Frank–van der Merwe mode to the Volmer–Weber mode with decreasing sputtering power from 900 W to 150 W. In the second stage, the growth behavior of TiO2 coatings gradually transforms from the Stranski–Krastanov mode to the Volmer–Weber mode. Transformation of the growth behavior of TiO2 coatings in the second stage transforms the crystal structure of TiO2 coatings from the anatase phase to the amorphous phase. The micro-temperature of TiO2 film growth surface decrease from 630 to 241°C with decreasing the sputtering power from 900 to 150 W. Then, in the first stage, the growth behavior of TiO2 films gradually transforms from the Frank-van der Merwe mode to the Volmer-Weber mode with decreasing sputtering power from 900 to 150 W, which results in the increase of β1 from 0.045 to 0.475. In the second stage, the growth behavior of TiO2 films gradually transforms from the Stranski-Krastanov mode to the Volmer-Weber mode, which results in the decrease of β2 from 0.744 to 0.580. [ABSTRACT FROM AUTHOR]