JOURNAL ARTICLE

High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric.

  • Published In: Applied Physics Letters, 2024, v. 124, n. 23. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Huang, Qizhi; Deng, Xuguang; ZHANG, LI; Lin, Wenkui; Cheng, Wei; Yu, Guohao; Ju, Tao; Mudiyanselage, Dinusha Herath; Wang, Dawei; Fu, Houqiang; Zeng, Zhongming; Zhang, Baoshun; Xu, Feng 3 of 3

Abstract

This article focuses on the development and evaluation of gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using a scandium aluminum nitride (Sc₀.₂Al₀.₈N)/silicon nitride (SiNₓ) composite gate dielectric. The composite dielectric demonstrated enhanced device performance, including higher current density, reduced on-resistance, increased breakdown voltage, lower gate leakage, and significantly suppressed current collapse compared to devices with single-layer Sc₀.₂Al₀.₈N or SiNₓ dielectrics. The insertion of a thin SiNₓ layer mitigates surface damage from ScAlN sputtering and reduces interface trap density, while the high valence band offset (0.78 eV) at the Sc₀.₂Al₀.₈N/SiNₓ interface effectively blocks hole injection, improving device stability and switching characteristics. These findings suggest that the Sc₀.₂Al₀.₈N/SiNₓ composite gate dielectric is a promising approach for advancing high-performance, reliable GaN MIS-HEMTs in power and radio-frequency electronics.

Additional Information

  • Source:Applied Physics Letters. 2024/06, Vol. 124, Issue 23, p1
  • Document Type:Article
  • Subject Area:Science
  • Publication Date:2024
  • ISSN:0003-6951
  • DOI:10.1063/5.0205290
  • Accession Number:177745066
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