JOURNAL ARTICLE

Visible-spectrum (405–505 nm) low-temperature-deposited deuterated (D) SiNx-SiOy waveguides.

  • Published In: Applied Physics Letters, 2025, v. 126, n. 4. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Markham, Keith; Rabbani, Mohammad; Hsiao, Fu-Chen; Wierer, Jonathan; Kish, Fred 3 of 3

Abstract

This article focuses on the demonstration of low-temperature (300 °C) plasma-enhanced chemical vapor deposition (PECVD) of deuterated silicon nitride (SiNₓ:D) and silicon oxide (SiO_y:D) waveguides operating in the visible violet-to-cyan spectrum (405–505 nm). These waveguides exhibit low insertion losses ranging from 3.2 dB/cm at 405 nm to 0.8 dB/cm at 505 nm, comparable to high-temperature (≥800 °C) LPCVD SiNₓ waveguides, but with processing temperatures compatible with back-end-of-line (BEOL) integration. The study identifies scattering loss as the dominant loss mechanism and models absorption and scattering contributions, suggesting that further reduction in sidewall roughness could enable sub-1 dB/cm losses at 405 nm. This low-temperature, low-loss SiNₓ:D platform offers promising potential for heterogeneous integration of photonic integrated circuits (PICs) with active devices in the visible spectrum, particularly for applications requiring BEOL-compatible processing.

Additional Information

  • Source:Applied Physics Letters. 2025/01, Vol. 126, Issue 4, p1
  • Document Type:Article
  • Subject Area:Science
  • Publication Date:2025
  • ISSN:0003-6951
  • DOI:10.1063/5.0244182
  • Accession Number:182618297
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