JOURNAL ARTICLE

Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure.

  • Published In: Applied Physics Letters, 2023, v. 122, n. 15. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Shin, Wonjun; Park, Eun Chan; Koo, Ryun-Han; Kwon, Dongseok; Kwon, Daewoong; Lee, Jong-Ho 3 of 3

Abstract

This article focuses on the investigation of low-frequency noise (LFN) characteristics in indium–gallium–zinc oxide (IGZO) ferroelectric thin-film transistors (FeTFTs) with a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure. The study reveals that noise generation mechanisms vary depending on the metal-to-ferroelectric area ratio (AM/AF) and the drain current (ID) region: in low ID regions, excess noise arises from carrier mobility fluctuations caused by remote phonon scattering in devices with higher AM/AF, while in high ID regions, 1/f noise originates from carrier number fluctuations regardless of AM/AF. These findings highlight the importance of understanding LFN behavior for the practical application of FeTFTs in emerging technologies such as neuromorphic computing and sensors.

Additional Information

  • Source:Applied Physics Letters. 2023/04, Vol. 122, Issue 15, p1
  • Document Type:Article
  • Subject Area:Science
  • Publication Date:2023
  • ISSN:0003-6951
  • DOI:10.1063/5.0140953
  • Accession Number:163113592
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