JOURNAL ARTICLE

Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer.

  • Published In: Applied Physics Letters, 2023, v. 123, n. 23. P. 1 1 of 3

  • Database: Academic Search Ultimate 2 of 3

  • Authored By: Xu, Mingfei; Biswas, Abhijit; Li, Tao; He, Ziyi; Luo, Shisong; Mei, Zhaobo; Zhou, Jingan; Chang, Cheng; Puthirath, Anand B.; Vajtai, Robert; Ajayan, Pulickel M.; Zhao, Yuji 3 of 3

Abstract

This article focuses on the fabrication and performance enhancement of β-Ga₂O₃ metal–insulator–semiconductor (MIS) diodes through the direct growth of an ultrathin boron nitride (BN) interlayer using pulsed laser deposition (PLD). The insertion of a ∼2.8 nm BN layer on the Ga₂O₃ substrate was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy, and resulted in an increased breakdown voltage from 732 V in Ga₂O₃ Schottky barrier diodes (SBDs) to 1035 V in MIS diodes. This improvement is attributed to the passivation of surface-related defects and reduced reverse leakage currents, leading to a 138% enhancement in the power figure of merit. The study suggests that direct BN growth on Ga₂O₃ substrates offers a promising approach to advance Ga₂O₃-based devices for next-generation high-power electronics.

Additional Information

  • Source:Applied Physics Letters. 2023/12, Vol. 123, Issue 23, p1
  • Document Type:Article
  • Subject Area:Science
  • Publication Date:2023
  • ISSN:0003-6951
  • DOI:10.1063/5.0176578
  • Accession Number:174100545
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