JOURNAL ARTICLE
OFETs Electric Characteristics with Different Organic Materials for Low-Power Flexible Electronics Design.
Published In: Journal of Circuits, Systems & Computers, 2025, v. 34, n. 3. P. 1 1 of 3
Database: Academic Search Ultimate 2 of 3
Authored By: Kaur, Parminder; Raj, Balwant; Bala, Shashi; Raj, Balwinder 3 of 3
Abstract
Over the past decades, organic electronics have attracted wide research attention in transistors. One of the devices is organic field effect transistors (OFET), which brought a great revolution for their excellent mechanical flexibility, lightweight, low-temperature deposition, low manufacturing cost and conformable large coverage area, in contrast to conventional silicon-based transistors. This paper highlights the overview of OFET structure, operation and electrical parameters that affect the performance. The influence of gate dielectric thickness, electrode width and channel length on the behavior of transistors in terms of threshold voltage, current ratio and saturation mobility value has also been discussed. The progress in the development of organic semiconductor materials is also outlined, which helps to resolve the power consumption issue. [ABSTRACT FROM AUTHOR]
Additional Information
- Source:Journal of Circuits, Systems & Computers. 2025/02, Vol. 34, Issue 3, p1
- Document Type:Article
- Subject Area:Science
- Publication Date:2025
- ISSN:0218-1266
- DOI:10.1142/S0218126625500707
- Accession Number:183762420
- Copyright Statement:Copyright of Journal of Circuits, Systems & Computers is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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